cascadable silicon bipolar mmic amplifiers technical data features ? usable gain to 6.0 ghz ? high gain: 32.5 db typical at 0.1 ghz 23.0 db typical at 1.0 ghz ? low noise figure: 3.0 db typical at 1.0 ghz ? cost effective ceramic microstrip package msa-0835, -0836 35 micro-x package [1] description the msa-0835 is a high perfor- mance silicon bipolar monolithic microwave integrated circuit (mmic) housed in a cost effective, microstrip package. this mmic is designed for use as a general purpose 50 w gain block above typical biasing configuration c block c block r bias v cc > 10 v v d = 7.8 v rfc (optional) in out msa 4 1 2 3 note: 1. short leaded 36 package available upon request. 0.5 ghz and can be used as a high gain transistor below this fre- quency. typical applications include narrow and moderate band if and rf amplifiers in commercial and industrial applications. the msa-series is fabricated using agilents 10 ghz f t , 25 ghz f max , silicon bipolar mmic process which uses nitride self-alignment, ion implantation, and gold metalli- zation to achieve excellent performance, uniformity and reliability. the use of an external bias resistor for temperature and current stability also allows bias flexibility. available in cut lead version (package 36) as MSA-0836.
2 msa-0835, -0836 absolute maximum ratings parameter absolute maximum [1] device current 80 ma power dissipation [2,3] 750 mw rf input power +13 dbm junction temperature 200 c storage temperature [4] C65 c to 200 c thermal resistance [2,5] : q jc = 175 c/w notes: 1. permanent damage may occur if any of these limits are exceeded. 2. t case = 25 c. 3. derate at 5.7 mw/ c for t c > 69 c. 4. storage above +150 c may tarnish the leads of this package making it difficult to solder into a circuit. 5. the small spot size of this technique results in a higher, though more accurate determination of q jc than do alternate methods. see measure- ments section thermal resistance for more information. g p power gain (|s 21 | 2 ) f = 0.1 ghz db 32.5 f = 1.0 ghz 22.0 23.0 25.0 f = 4.0 ghz 10.5 input vswr f = 1.0 to 3.0 ghz 2.0:1 output vswr f = 1.0 to 3.0 ghz 1.5:1 nf 50 w noise figure f = 1.0 ghz db 3.0 p 1 db output power at 1 db gain compression f = 1.0 ghz dbm 12.5 ip 3 third order intercept point f = 1.0 ghz dbm 27.0 t d group delay f = 1.0 ghz psec 125 v d device voltage v 7.0 7.8 8.4 dv/dt device voltage temperature coefficient mv/ c C17.0 note: 1. the recommended operating current range for this device is 20 to 40 ma. typical performance as a function of current is on the following page. electrical specifications [1] , t a = 25 c symbol parameters and test conditions: i d = 36 ma, z o = 50 w units min. typ. max. vswr part number ordering information part number no. of devices container msa-0835 10 strip MSA-0836-blk 100 antistatic bag MSA-0836-tr1 1000 7" reel for more information, see tape and reel packaging for semiconductor devices.
3 msa-0835, -0836 typical scattering parameters [1] (z o = 50 w , t a = 25 c, i d = 36 ma) freq. ghz mag ang db mag ang db mag ang mag ang k 0.1 .63 C17 32.5 42.02 161 C37.7 .013 55 .63 C19 0.72 0.2 .58 C33 31.5 37.52 145 C33.7 .021 47 .56 C37 0.73 0.4 .49 C56 29.1 28.50 119 C29.7 .033 54 .42 C66 0.72 0.6 .40 C70 26.7 21.54 103 C27.9 .040 55 .32 C84 0.78 0.8 .35 C80 24.6 17.01 92 C26.0 .050 53 .24 C98 0.85 1.0 .33 C89 22.9 13.98 82 C24.9 .057 52 .18 C107 0.89 1.5 .30 C111 19.5 9.45 64 C22.1 .079 51 .09 C126 0.95 2.0 .30 C133 16.9 7.03 48 C20.2 .098 44 .07 C141 0.99 2.5 .32 C150 14.9 5.53 39 C19.2 .110 42 .06 C166 1.04 3.0 .34 C170 13.2 4.56 26 C18.3 .122 36 .06 C106 1.06 3.5 .38 175 11.7 3.86 14 C17.5 .133 32 .08 C100 1.08 4.0 .39 162 10.5 3.33 2 C16.7 .146 27 .12 C101 1.08 5.0 .41 132 7.9 2.47 C21 C15.6 .165 19 .21 C113 1.10 6.0 .52 95 5.8 1.94 C45 C14.6 .187 7 .20 C149 1.05 note: 1. a model for this device is available in the device models section. s 11 s 21 s 12 s 22 typical performance, t a = 25 c (unless otherwise noted) g p (db) 0.1 0.3 0.5 1.0 3.0 6.0 frequency (ghz) figure 1. typical power gain vs. frequency, i d = 36 ma. 2 046810 v d (v) figure 2. device current vs. voltage. figure 3. power gain vs. current. 0 5 10 15 20 25 30 35 0 35 gain flat to dc i d (ma) t c = +125 c t c = +25 c t c = ?5 c figure 4. output power at 1 db gain compression, nf and power gain vs. case temperature, f = 1.0 ghz, i d =36ma. frequency (ghz) figure 5. output power at 1 db gain compression vs. frequency. frequency (ghz) figure 6. noise figure vs. frequency. 10 20 30 i d (ma) 5 10 15 20 25 30 35 g p (db) 10 30 40 20 0.1 ghz 4.0 ghz 2.0 ghz 0.5 ghz 1.0 ghz 2 3 4 10 11 12 13 21 22 23 24 ?5 ?5 +25 +85 +125 p 1 db (dbm) nf (db) gp (db) temperature ( c) p 1 db nf g p 3.0 2.5 3.5 4.0 4.5 nf (db) 0.1 0.2 0.3 0.5 2.0 1.0 4.0 0.1 0.2 0.3 0.5 2.0 1.0 4 6 8 10 16 14 12 p 1 db (dbm) i d = 36 ma i d = 40 ma i d = 20 ma i d = 20 ma i d = 36 ma i d = 40 ma
www.semiconductor.agilent.com data subject to change. copyright ? 1999 agilent technologies 5965-9596e (11/99) 35 micro-x package dimensions 13 4 2 ground dia. ground rf output and bias rf input .085 2.15 .083 2.11 .020 .508 .100 2.54 .455 .030 11.54 .75 .006 .002 .15 .05 notes: (unless otherwise specified) 1. dimensions are in 2. tolerances in .xxx = 0.005 mm .xx = 0.13 mm .022 .56 .057 .010 1.45 .25 a08
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